Transistor. ADM57N10 Datasheet

ADM57N10 Datasheet PDF

Part ADM57N10
Description N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM57N10  N-Channel Enhancement Mode Field Effect Transistor PROD.
Manufacture ADV
Datasheet
Download ADM57N10 Datasheet

                        ADV     ADM57N10  N-Channel Enhanc ADM57N10 Datasheet




ADM57N10
                       
ADV  
 
ADM57N10 
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
100V
ID
57A
RDS(ON) (mΩ)
17mΩ
TO220C
Features:
Low Gate Charge for Fast Switching Application
Low RDS(ON) to Minimize Conductive Loss
100% EAS Guaranteed
Optimized V(BR)DSS Ruggedness
Lead-Free,RoHS Compliant
1 
2 
3 
Description:
The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC =25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested2
ID Continuous Drain Current1
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
TC=25°C
Ratings
100
±20
175
-55 to 175
57
160
57
40
160
Unit
V
°C
°C
A
A
A
A
W
Thermal Characteristics
Symbol
RthJC
RthJA
Parameter
Thermal resistance junction-case max1
Thermal resistance junction-ambient max1
 
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Ratings
0.94
62
Unit
°C/W
°C/W
Feb,2013 -Rev.2.01



ADM57N10
                       
ADV  
 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
V(BR)DSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250uA
IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V ,
TJ=25°C
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250uA
IGSS
RDS(ON)
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-SourceOn-stateResistance2VGS= 10V, IDS=28A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
Frequency=1MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V,
ID= 2A, VGS= 10V,
RGEN=2.5Ω
 
VDS=30V, VGS= 10V,
IDS=30A
Avalanche Characteristics
EAS
Single Pulse Avalanche Energy3
VDD=30V,L=0.5mH ,VGS=1
0V,Rg=25Ω
Diode Characteristics
VSD Diode Forward Voltage2
trr Reverse Recovery Time
qrr Reverse Recovery Charge
NOTES:
ISD = 28A, VGS = 0
ISD=28A, dlSD/dt=100A/s
1. Surface Mounted on FR4 Board, t 10 sec.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The Min. value is 100% EAS tested guarantee.
ADM57N10 
Min. Typ. Max. Unit
100 110 -- V
-- -- 1 uA
2 3 4V
-- -- ±100 nA
-- 14 17 m
-- 3400 --
-- 260 -- pF
-- 210 --
-- 15 --
-- 11 --
nS
-- 52 --
-- 13 --
-- 94 --
-- 16 -- nC
-- 24 --
580 --
-- mJ
-- 0.85 1.2 V
-- 33 -- ns
-- 54 -- nC
 
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Feb,2013 -Rev.2.01




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