ADM57N10

                        ADV     ADM57N10  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 57A RDS(ON) (mΩ) 17mΩ TO220C Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant 1  2  3  Description: The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested（2） ID Continuous Drain Current（1） PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C T...