PHILIPS
TENTATIVE DATA
R.F. GERMANIUM ALLOY-DIFFUSED TRANSISTOR
Germanium alloy-diffused transistor of the p-n-p type...
PHILIPS
TENTATIVE DATA
R.F. GERMANIUM ALLOY-DIFFUSED TRANSISTOR
Germanium alloy-diffused transistor of the p-n-p type in a metal case with low noise and high gain up to 260 Mc/s, for use in V . H . F . applications as amplifier-, oscillator- and converter circuits.
r L I M I T I N G V A L U E S (Absolute max. values) Collector
Voltage (base reference)
= max.
25 V
Current
= max.
10 mA
Emitter
Reverse current
= max.
1 mA
Base
Current
-Ig = max.
1 mA
Dissipation
Total dissipation
Ptot = max.
110 mW
Temperatures
Storage temperature Junction temperature
continuous incidentally (total duration max. 200 hrs)
THERMAL DATA
1s = -55 °C to+75 °C
iT = max.
T, = max. = max.
'96 °C
'?9Q° °C 200 hrs)
Thermal resistance from junction to ambience in free air
K = max. 0.4°C/mW
Shield load-
JANUARY 1964
PHILIPS ELECTRON TUBE DIVISION
Dimensions in mm TO-12 case
OD
C H A R A C T E R I S T I C S at Tamb = 25 °C Collector current at Ig = 0
= 12 v = 25 v
Emitter
voltage at 1 = 0 -IE = 50
=
-vEB
o
>y
10 50 juA
> o.s v
Base current -VCB = 12 V; -Ic - 1 mA
Base
voltage -VCB = 12 V; -Ic = 1 mA
-IB 50 -vBE > 220 mV -VBE < 360 mv
CHARACTERISTICS RANGE VALUES FOR EQUIP-
MENT DESIGN
- 25
Frequency at which = 1
-VCB = 12 V; IE = 1 mA
= 180 Mc/s
Base impedance
-vCB = 12 V; IE =
f = 2 Mc/s
zrb = 10
Feedback capacitance
= 12 V; -IC - 1 mA f = 0.45 Mc/s
-cre = 0.8 pF
1) Shield lead
CHARACTERISTICS RANGE VALUES FOR EQUIPM E N T D E S I G N (continued)
Current a...