Alfa-MOS
Technology
General Description
AFC6602, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to ...
Alfa-MOS
Technology
General Description
AFC6602, N & P Pair enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
AFC6602
30V N & P Pair Enhancement Mode
MOSFET
Features
N-Channel 30V/3.5A,RDS(ON)=75mΩ@VGS=10V 30V/2.6A,RDS(ON)=100mΩ@VGS=4.5V
P-Channel -30V/-2.7A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.1A,RDS(ON)=170mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design
Pin Description ( TSOP-6 )
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
©Alfa-MOS Technology Corp. Rev.A Jun. 2011
www.alfa-mos.com
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Alfa-MOS
Technology
Pin Define
Pin 1 2 3 4 5 6
AFC6602
30V N & P Pair Enhanc...
