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AFGB30T65RQDN IGBT Datasheet PDFIGBT IGBT |
| Part Number | AFGB30T65RQDN |
|---|---|
| Description | IGBT |
| Feature | IGBT for Automotive Applications
650 V, 30 A
AFGB30T65RQDN
Using novel field st op IGBT technology, onsemi’s new seri es of FS4 IGBTs offer the optimum perfo rmance for automotive applications. Thi s technology is Short circuit rated and offers high figure of merit with low c onduction and switching losses. Feature s • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Coeff icient for Easy Parallel Operation • High Current Capability • Low Saturat ion Voltage: VCE(Sat) = 1. 58 V (Typ. ) @ IC = 30 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impeda nce • Fast Switching • Tighte . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | AFGB30T65RQDN |
|---|---|
| Description | IGBT |
| Feature | IGBT for Automotive Applications
650 V, 30 A
AFGB30T65RQDN
Using novel field st op IGBT technology, onsemi’s new seri es of FS4 IGBTs offer the optimum perfo rmance for automotive applications. Thi s technology is Short circuit rated and offers high figure of merit with low c onduction and switching losses. Feature s • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Coeff icient for Easy Parallel Operation • High Current Capability • Low Saturat ion Voltage: VCE(Sat) = 1. 58 V (Typ. ) @ IC = 30 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impeda nce • Fast Switching • Tighte . |
| Manufacture | ON Semiconductor |
| Datasheet |
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