IGBT for Automotive Application
1200 V, 25 A
AFGHL25T120RHD
Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance for both hard and soft switching topology in automotive application.
Features
• Extremely Efficient Trench with Field Stop.