IGBT for Automotive Application
650 V, 30 A
AFGHL30T65RQDN
Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.
Features
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.) @ I.
IGBT
IGBT for Automotive Application
650 V, 30 A
AFGHL30T65RQDN
Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.
Features
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Tightened Parameter Distribution • This Device is Pb−Free and RoHS Compliant
Typical Applications
• E−compressor for HEV/EV, PTC heater for HEV/EV
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage
VCES VGES
650
V
±20
V
±30
Collector Current (Note 1) @ TC = 25°C @ TC = 100°C
IC
A
42
30
Pulsed Collector Current (Note 2)
ILM
120
A
Pulsed Collector Current (Note 3)
ICM
120
A
Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C
IF
A
42
30
Pulsed Diode Maximum Forward Current
IFM
120
A
Non−Repetitive Forward Surge Current (Half−Sine Pulse, tp = 8.3 ms, TC = 25°C) (Half−Sine Pulse, tp = 8.3 ms, TC = 150°C)
Short Circuit Withstand Time VGE = 15 V, VCC = 400 V, TC = 150°C
IFM
A
140
100
tSC
ms
5
Maximum Power Dissipation @ TC = 25°C @ TC = 100°C
PD
W
230.8
115.4
Operating Junct.