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AFGHL30T65RQDN Datasheet

Part Number AFGHL30T65RQDN
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet AFGHL30T65RQDN DatasheetAFGHL30T65RQDN Datasheet (PDF)

IGBT for Automotive Application 650 V, 30 A AFGHL30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.) @ I.

  AFGHL30T65RQDN   AFGHL30T65RQDN






IGBT

IGBT for Automotive Application 650 V, 30 A AFGHL30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Tightened Parameter Distribution • This Device is Pb−Free and RoHS Compliant Typical Applications • E−compressor for HEV/EV, PTC heater for HEV/EV MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES VGES 650 V ±20 V ±30 Collector Current (Note 1) @ TC = 25°C @ TC = 100°C IC A 42 30 Pulsed Collector Current (Note 2) ILM 120 A Pulsed Collector Current (Note 3) ICM 120 A Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C IF A 42 30 Pulsed Diode Maximum Forward Current IFM 120 A Non−Repetitive Forward Surge Current (Half−Sine Pulse, tp = 8.3 ms, TC = 25°C) (Half−Sine Pulse, tp = 8.3 ms, TC = 150°C) Short Circuit Withstand Time VGE = 15 V, VCC = 400 V, TC = 150°C IFM A 140 100 tSC ms 5 Maximum Power Dissipation @ TC = 25°C @ TC = 100°C PD W 230.8 115.4 Operating Junct.


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