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AFGHL50T65RQDN IGBT Datasheet PDFIGBT IGBT |
| Part Number | AFGHL50T65RQDN |
|---|---|
| Description | IGBT |
| Feature | IGBT for Automotive Application
650 V, 5 0 A
AFGHL50T65RQDN
Using novel field st op IGBT technology, onsemi’s new seri es of field stop 4th generation IGBTs o ffer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Fea tures • Maximum Junction Temperature: TJ = 175°C • Positive Temperature C o−efficient for Easy Parallel Operati on • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1. 6 V (T yp. ) @ IC = 50 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Ti . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | AFGHL50T65RQDN |
|---|---|
| Description | IGBT |
| Feature | IGBT for Automotive Application
650 V, 5 0 A
AFGHL50T65RQDN
Using novel field st op IGBT technology, onsemi’s new seri es of field stop 4th generation IGBTs o ffer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Fea tures • Maximum Junction Temperature: TJ = 175°C • Positive Temperature C o−efficient for Easy Parallel Operati on • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1. 6 V (T yp. ) @ IC = 50 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Ti . |
| Manufacture | ON Semiconductor |
| Datasheet |
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