Hybrid IGBT, 50 A, 650 V
AFGHL50T65SQDC
Using the novel field stop 4th generation IGBT technology and the 1.5th genera...
Hybrid IGBT, 50 A, 650 V
AFGHL50T65SQDC
Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter.
Features
AEC−Q101 Qualified Maximum Junction Temperature : TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation
Voltage: VCE(Sat) = 1.6 V (Typ.) @IC = 50 A Fast Switching Tighten Parameter Distribution No Reverse Recovery/No Forward Recovery
Typical Applications
Automotive On & Off Board Chargers DC−DC Converters PFC Industrial Inverter
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector to Emitter
Voltage
Gate to Emitter
Voltage Transient Gate to Emitter
Voltage
VCES 650
V
VGES ±20
V
±30
Collector Current
@TC = 25°C @TC = 100°C
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
Diode Forward Current
@TC = 25°C @TC = 100°C
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation @TC = 25°C @TC = 100°C
Operating Junction / Storage Temperature Range
Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds
IC
100
A
50
ILM
200
A
ICM
200
A
IF
40
A
20
IFM
200
A
PD
238
W
119
TJ, ±55 to °C TSTG +175
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table m...
