AFGHL75T65SQ

Field Stop Trench IGBT 650 V, 75 A, TO247 AFGHL75T65SQ Using the novel field stop 4th generation IGBT technology, AFGHL75T65SQ offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not require reverse recovery specification. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution AEC−Q101 Qualified and PPAP Capable Typical Applications Automotive On & Off Board Chargers DC−DC Converters PFC Industrial Inverter MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C IC 80 A @ TC = 100°C 75 Pulsed Collector Current (Note 2) ILM 300 A Pulsed Collector Current (Note 3) ICM 300 A Maximum Power Dissipation @ TC = 25°C PD 375 W @ TC = 100°C 188 Operating Junction / Storage Temperature Range TJ, −55 to °C TSTG +175 Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 10 seconds TL 265 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may oc...