IGBT – Hybrid, Field Stop, Trench
650 V, 75 A, TO247
AFGHL75T65SQDC
Using the novel field stop 4th generation IGBT tec...
IGBT – Hybrid, Field Stop, Trench
650 V, 75 A, TO247
AFGHL75T65SQDC
Using the novel field stop 4th generation IGBT technology and the
1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC
offers the optimum performance with both low conduction and
switching losses for high efficiency operations in various applications,
especially totem pole bridgeless PFC and Inverter. Features
Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation
Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified and PPAP Capable
Typical Applications
Automotive On & Off Board Chargers DC−DC Converters PFC Industrial Inverter
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−to−Emitter
Voltage
Gate−to−Emitter
Voltage Transient Gate−to−Emitter
Voltage
VCES 650
V
VGES ±20
V
±30
Collector Current (Note 1)
@ TC = 25°C IC
80
A
@ TC = 100°C
75
Pulsed Collector Current (Note 2)
ILM
300
A
Pulsed Collector Current (Note 3)
ICM
300
A
Diode Forward Current (Note 1) @ TC = 25°C IF
35
A
@ TC = 100°C
20
Pulsed Diode Maximum Forward Current
IFM
200
A
Maximum Power Dissipation
@ TC = 25°C PD
375
W
@ TC = 100°C
188
Operating Junction / Storage Temperature Range
TJ, −55 to °C TSTG +175
Maximum Lead Temp. for Soldering Pu...
