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AFGHL75T65SQDT IGBT Datasheet PDFIGBT IGBT |
　
　
　
| Part Number | AFGHL75T65SQDT |
|---|---|
| Description | IGBT |
| Feature | Field Stop Trench IGBT
650 V, 75 A
AFGH L75T65SQDT
Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQD T offers the optimum performance with b oth low conduction and switching losses for a high efficiency operation in var ious applications, especially totem pol e bridgeless PFC and DCDC block as well . Features • AEC−Q101 Qualified †¢ Maximum Junction Temperature: TJ = 17 5°C • Positive Temperature Co−effi cient for Easy Parallel Operating • H igh Current Capability • Low Saturati on Voltage: VCE(Sat) = 1. 6 V (Typ. ) @ I C = 75 A • 100% of the Parts . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | AFGHL75T65SQDT |
|---|---|
| Description | IGBT |
| Feature | Field Stop Trench IGBT
650 V, 75 A
AFGH L75T65SQDT
Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQD T offers the optimum performance with b oth low conduction and switching losses for a high efficiency operation in var ious applications, especially totem pol e bridgeless PFC and DCDC block as well . Features • AEC−Q101 Qualified †¢ Maximum Junction Temperature: TJ = 17 5°C • Positive Temperature Co−effi cient for Easy Parallel Operating • H igh Current Capability • Low Saturati on Voltage: VCE(Sat) = 1. 6 V (Typ. ) @ I C = 75 A • 100% of the Parts . |
| Manufacture | ON Semiconductor |
| Datasheet |
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