Alfa-MOS
Technology
General Description
AFN1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Alfa-MOS
Technology
General Description
AFN1012, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low
voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-523 )
AFN1012
20V N-Channel Enhancement Mode
MOSFET
Features
20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error)
Voltage Low-
Voltage Operation High-Speed Circuits Low Battery
Voltage Operation SOT-523 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1012S52RG
X
SOT-523
ϡʳ AFN1012S52RG : ...