AFN1072E

Alfa-MOS Technology General Description AFN1072E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-723 ) AFN1072E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.6A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-723 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN1072ES72RG 20 SOT-723 ϡ...