Alfa-MOS
Technology
AFN1510S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN1510S, N-Channel enhancemen...
Alfa-MOS
Technology
AFN1510S
100V N-Channel Enhancement Mode
MOSFET
General Description
AFN1510S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
Features
100V/25A,RDS(ON)= 46mΩ@VGS=10V 100V/20A,RDS(ON)= 52mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
High Frequency Boost Converter LED Backlight for LCD TV
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1510S
AFN1510ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1510ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Aug. 2012
Description Gate Drain Source
Unit Tube
Quantity 50 EA
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