Alfa-MOS
Technology
AFN1998S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN1998S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-263-2L )
Features
100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS.