Alfa-MOS
Technology
General Description
AFN3009S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Alfa-MOS
Technology
General Description
AFN3009S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFN3009S
30V N-Channel Enhancement Mode
MOSFET
Features
30V/35A,RDS(ON)=8.5mΩ@VGS=10V 30V/20A,RDS(ON)=11.5mΩ@VGS=4.5V Super high density cell design for extremely
low RDS (ON) TO-252-2L package design
Application
Buck Converter − High Side − Low Side
Synchronous Rectifier − Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3009ST252RG
3009S
TO-252-2L
※ A Lot code
※ B Date code
※ AFN3009ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp. Rev.B June 2018
Description Gate Source Drain
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