Alfa-MOS
Technology
AFN4240S
40V N-Channel Enhancement Mode MOSFET
General Description
AFN4240S, N-Channel enhancement...
Alfa-MOS
Technology
AFN4240S
40V N-Channel Enhancement Mode
MOSFET
General Description
AFN4240S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
40V/30A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.3mΩ@VGS=4.5V Super high density cell design for extremely low RDS
(ON)
TO-220-3L package design
Pin Description ( TO-220-3L )
Application
Synchronous Rectifier Power Supplies
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4240S
AFN4240ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4240ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.B Dec. 2013
Description Gate Drain Source
Unit Tube
Quantity 50 EA
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