Alfa-MOS
Technology
AFN5296S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN5296S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
z 100V/20A,RDS(ON)=7.2mΩ@VGS=10V z 100V/15A,RDS(ON)=10.5mΩ@VGS=4.5V z Super high density cell design for extremel.