Alfa-MOS
Technology
General Description
AFN8904, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-89-3L )
AFN8904
30V N-Channel Enhancement Mode MOSFET
Features
30V/5.6A,RDS(ON)=72mΩ@VGS=10V 30V/3.6A,RDS(ON)=95mΩ@VGS=4.5V Super high density cell des.