AFN9004S

Alfa-MOS Technology AFN9004S 40V N-Channel Enhancement Mode MOSFET General Description AFN9004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 40V/25A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.1mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin Description ( TO-263-2L ) Application Power supply --- Secondary synchronous rectification DC/DC converter Power tools Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking 9004S Package AFN9004ST263RG AAAAAA TO-263-2L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN9004ST263RG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Nov. 2015 Description Gate Drain Source Unit Tape & Reel Quantit...