Alfa-MOS
Technology
AFN9987
90V N-Channel Enhancement Mode MOSFET
General Description
AFN9987, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
90V/15A,RDS(ON)= 75mΩ@VGS=10V 90V/12A,RDS(ON)= 85mΩ@VGS=4.5V Super high density cell design for extremely low RDS (O.