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AFN9990S Datasheet

Part Number AFN9990S
Manufacturers Alfa-MOS
Logo Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Datasheet AFN9990S DatasheetAFN9990S Datasheet (PDF)

Alfa-MOS Technology AFN9990S 60V N-Channel Enhancement Mode MOSFET General Description AFN9990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS .

  AFN9990S   AFN9990S






N-Channel Enhancement Mode MOSFET

Alfa-MOS Technology AFN9990S 60V N-Channel Enhancement Mode MOSFET General Description AFN9990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-2L ) Application Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN9990ST252RG 9990S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN9990ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Oct. 2013 Description Gate .


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