Alfa-MOS
Technology
AFN9995S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN9995S, N-Channel enhancemen...
Alfa-MOS
Technology
AFN9995S
100V N-Channel Enhancement Mode
MOSFET
General Description
AFN9995S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
100V/20A,RDS(ON)= 45mΩ@VGS=10V 100V/16A,RDS(ON)= 50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-2L )
Application
High Frequency Boost Converter LED Backlight for LCD TV
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN9995ST252RG
9995S
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFN9995ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Aug. 2012
Description Gate Source Drain
Unit Tape & Reel
Quantity 2500 EA
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