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AFP2337S

Alfa-MOS

P-Channel Enhancement Mode MOSFET

Alfa-MOS Technology General Description AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...


Alfa-MOS

AFP2337S

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Description
Alfa-MOS Technology General Description AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2337S 100V P-Channel Enhancement Mode MOSFET Features z -100V/-3.8A,RDS(ON)= 200mΩ@VGS= -10V z -100V/-2.6A,RDS(ON)= 210mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z SOT-23-3L package design Application z Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2337SS23RG 37SYW SOT-23-3L ※ 37S parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2337SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology ...




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