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AFP5039S Datasheet

Part Number AFP5039S
Manufacturers Alfa-MOS
Logo Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
Datasheet AFP5039S DatasheetAFP5039S Datasheet (PDF)

Alfa-MOS Technology General Description AFP5039S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP5039S 100 P-Channel Enhancement Mode MOSFET Features -100/-12A,RDS(ON)= 90mΩ@VGS= -10V -100/-8A,RDS(ON)= 100mΩ@VGS= -4.5V Super high densit.

  AFP5039S   AFP5039S






P-Channel Enhancement Mode MOSFET

Alfa-MOS Technology General Description AFP5039S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP5039S 100 P-Channel Enhancement Mode MOSFET Features -100/-12A,RDS(ON)= 90mΩ@VGS= -10V -100/-8A,RDS(ON)= 100mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch DC/DC Converters Active Clamp in Intermediate DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP5039ST252RG 5039S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP5039ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A May 2015 Description Gate Source Drain Unit Tape & Reel Quant.


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