Alfa-MOS
Technology
General Description
AFP5039S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP5039S
100 P-Channel Enhancement Mode MOSFET
Features
-100/-12A,RDS(ON)= 90mΩ@VGS= -10V -100/-8A,RDS(ON)= 100mΩ@VGS= -4.5V Super high densit.