AFP6405WS

Alfa-MOS Technology General Description AFP6405WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP6405WS 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=54mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=75mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFP6405WSTS6RG 5WYW TSOP-6 ϡʳ 5W parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ...