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AFP8206 Datasheet

Part Number AFP8206
Manufacturers Alfa-MOS
Logo Alfa-MOS
Description P-Channel MOSFET
Datasheet AFP8206 DatasheetAFP8206 Datasheet (PDF)

Alfa-MOS Technology General Description AFP8206, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP8206 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.5A,RD.

  AFP8206   AFP8206






P-Channel MOSFET

Alfa-MOS Technology General Description AFP8206, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP8206 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.5A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=96mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Load Switch Portable Equipment Battery Powered System Pin Define Pin 1 2 3 4 5 6 Symbol S1 D1/D2 S2 G2 D1/D2 G1 Ordering Information Part Ordering No. Part Marking Package AFP8206TS6RG 06YW TSOP-6 ϡʳ 06 parts code ϡʳ Y year code ( 0 ~ 9 ) .


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