Alfa-MOS
Technology
General Description
AFP8452, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Alfa-MOS
Technology
General Description
AFP8452, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-223 )
AFP8452
30V P-Channel Enhancement Mode
MOSFET
Features
-30V/-5.0A,RDS(ON)=70mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-223 package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFP8452S223RG
8452
SOT-223
ϡʳ YY year code
ϡʳ WW week code
ϡʳ AFP8452S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A June 2011
Description Gate...