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AFP8452

Alfa-MOS

P-Channel Enhancement Mode MOSFET

Alfa-MOS Technology General Description AFP8452, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...


Alfa-MOS

AFP8452

File Download Download AFP8452 Datasheet


Description
Alfa-MOS Technology General Description AFP8452, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFP8452 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=70mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-223 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFP8452S223RG 8452 SOT-223 ϡʳ YY year code ϡʳ WW week code ϡʳ AFP8452S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A June 2011 Description Gate...




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