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AFP8483

Alfa-MOS

P-Channel Enhancement Mode MOSFET

Alfa-MOS Technology General Description AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...


Alfa-MOS

AFP8483

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Description
Alfa-MOS Technology General Description AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFP8483 100V P-Channel Enhancement Mode MOSFET Features -100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems. Backlight Inverter for LCD Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFP8483S223RG 8483 SOT-223 ϡʳ YY year code ϡʳ WW week code ϡʳ AFP8483S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology ...




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