Alfa-MOS
Technology
General Description
AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-89-3L )
AFP8989
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-3.6A,RDS(ON)= 115mΩ@VGS= -10V -60V/-2.6A,RDS(ON)= 125mΩ@VGS= -4.5V Super high dens.
P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-89-3L )
AFP8989
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-3.6A,RDS(ON)= 115mΩ@VGS= -10V -60V/-2.6A,RDS(ON)= 125mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design
Application
Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems. Backlight Inverter for LCD Display Load Switch CCFL Inverter
Pin Define
Pin 1 2 3
Symbol G D S
Description Gate Drain Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFP8989S89RG
89YW
SOT-89-3L
ϡʳ 89 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP8989S89RG : 7.