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AFP8989 Datasheet

Part Number AFP8989
Manufacturers Alfa-MOS
Logo Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
Datasheet AFP8989 DatasheetAFP8989 Datasheet (PDF)

Alfa-MOS Technology General Description AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFP8989 60V P-Channel Enhancement Mode MOSFET Features -60V/-3.6A,RDS(ON)= 115mΩ@VGS= -10V -60V/-2.6A,RDS(ON)= 125mΩ@VGS= -4.5V Super high dens.

  AFP8989   AFP8989






P-Channel Enhancement Mode MOSFET

Alfa-MOS Technology General Description AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFP8989 60V P-Channel Enhancement Mode MOSFET Features -60V/-3.6A,RDS(ON)= 115mΩ@VGS= -10V -60V/-2.6A,RDS(ON)= 125mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems. Backlight Inverter for LCD Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFP8989S89RG 89YW SOT-89-3L ϡʳ 89 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP8989S89RG : 7.


2018-12-11 : AFN2330    AFN2354    AFN2376    AFN3400S    AFN3404S    AFN3416    AFN2378S    AFP3415    AFP3413    AFP3405   


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