AFP9576

Alfa-MOS Technology General Description AFP9576, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9576 60V P-Channel Enhancement Mode MOSFET Features -60V/-14A,RDS(ON)= 115mΩ@VGS= -10V -60V/-10A,RDS(ON)= 125mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP9576T252RG 9576 TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP9576T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.B Apr. 2011 Description Gate Source Drain Unit T...