AFT05MP075GNR1

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. Typical Performance: 12.5 V, TA = 25C, CW Gps D Pout Frequency (dB) (%) (W) 136 MHz 21.0 68.0 76 450--520 MHz (1) 14.6 65.8 75 520 MHz (2) 18.5 68.5 70 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 520 (2) CW > 65:1 at all 2 Phase Angles (3 dB Overdrive) 17 No Device Degradation 1. Measured in 450--520 MHz UHF broadband reference circuit. 2. Measured in 520 MHz narrowband test circuit. Features  Characterized for Operation from 136 to 520 MHz  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Integrated ESD Protection  Integrated Stability Enhancements  Wideband — Full Power Across the Band  Exceptional Thermal Performance  Extreme Ruggedness  High Linearity for: TETRA, SSB, LTE  In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. Typical Applications  Output Stage VHF Band Mobile Radio  Output Stage UHF Band Mobile Radio Document Number: AFT05MP075N Rev. 1, 8/2014 AFT05MP075NR1 AFT05MP075GNR1 136–520 MHz, 70 W, 12.5 V BROADBAND RF POWER LDMOS TRANSISTORS TO--270WB--...