NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF pow...
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral
MOSFETs
These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications with large duty cycles and long pulses, such as
IFF, secondary surveillance radars, ADS--B transponders, DME and other complex pulse chains.
Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency (MHz) (1)
Signal Type
VDD
Pout
Gps
D
(V)
(W)
(dB)
(%)
1030 1090 1030 1090
Pulse (128 sec, 10% Duty Cycle)
50
800 Peak
17.5
52.1
700 Peak
19.0
56.1
52
850 Peak
17.5
51.7
770 Peak
19.2
56.1
Typical Performance: In 960–1215 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency (MHz)
Signal Type
VDD
Pout
Gps
D
(V)
(W)
(dB)
(%)
960 1030 1090 1215
Pulse (128 sec, 4% Duty Cycle)
50
747 Peak
16.7
50.8
713 Peak
16.5
49.7
700 Peak
16.5
47.1
704 Peak
16.5
54.5
Typical Performance: In 1030 MHz narrowband production test fixture,
IDQ(A+B) = 100 mA
Frequency (MHz)
Signal Type
VDD
Pout
Gps
(V) (W) (dB)
1030 (2)
Pulse (128 sec, 10% Duty Cycle)
50
730 Peak
19.2
D (%) 58.5
Narrowband Load Mismatch/Ruggedness
Frequency (MHz)
Signal Type
VSWR
Pin Test (W)
Voltage
1030 (2)
Pulse (128 sec, 10% Duty Cycle)
> 20:1 at All Phase
Angles
17.2 Peak (3 dB
Overdrive)
50
1. Measured in 1030–1090 MHz reference circuit (page 5). 2. ...
