AGR09180EF

AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 180 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym R JC Value 0.35 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Unit Drain-source Voltage VDSS 65 Vdc Gate-source Voltage VGS –0.5, +15 Vdc Total Dissipation at TC = 25 °C PD 500 W Derate Above 25 ˇ C — 2.86 W/°C Operating Junction TemperaTJ 200 °C ture Storage Temperature Range TSTG –65, +150 °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maxim...