AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channe...
AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
Device Performance Features
High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1
voltage standing wave ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output power pulsed 4 µs at 10% duty. Large signal impedance parameters available.
ESD Rating*
AGR19180EF HBM MM CDM Minimum (V) 500 50 1000 Class 1B A 4
375D–03, STYLE 1
Figure 1. AGR19180EF (flanged) Package
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CDMA Features
Typical two carrier CDMA performance: VDD = 28 V, IDQ = 1600 mA, POUT = 38 W, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97 CDMA pilot, sync, paging, traffic codes 8—13 (9 channels) 1.2288 MHz channel bandwidth (BW), adjacent channel power ration (ACPR) measured over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz. Distortion products measured over 1.2288 MHz channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz. Peak/avg = 9.72 dB @ 0.01% probability on CCDF: — ...
