AGR26045EF

AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 1.5 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS –0.5, +15 Total Dissipation at TC = 25 °C PD 117 Derate Above 25 ° C — 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG –65, +150 Unit Vdc Vdc W W/°C °C °C Figure 1. AGR26045EF (flanged) Package Features Typical performance for MMDS systems. f = 2600 MHz, IDQ = 430 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF*: — Output power: 6.5 W. — Power gain: 13 dB. — Efficiency: 20% . — ACPR: –34 dBc. www.DataSheet4U.com — ACLR1: –36 dBc. — Return loss: –15 dB. Typical pulsed P1dB, 6 µs pulse at 10% duty: 47 W. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave rati...