AM0460AH

AiT Semiconductor Inc. www.ait-ic.com AM0460AH MOSFET N-CHANNEL DESCRIPTION AM0460AH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. FEATURES  Fast Switching  Low ON Resistance (RDS(ON)≤2.4Ω)  Low Gate Charge (Typical Data: 14nC)  Low Reverse transfer capacitances (Typical:4pF)  100% Single Pulse avalanche energy Test  Available in TO-252 Packages The AM0460AH is available in TO-252 package. ORDERING INFORMATION Package Type Part Number TO-252 AM0460AHDR D SPQ: 2,500pcs/Reel AM0460AHDVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products TYPICAL APPLICATION Schematic diagram REV1.0 - JUL 2019 RELEASED - -1- AiT Semiconductor Inc. www.ait-ic.com PIN DESCRIPTION AM0460AH MOSFET N-CHANNEL Pin # 1 2 3 Top View Symbol G D S Function Gate Drain Source REV1.0 - JUL 2019 RELEASED - -2- AiT Semiconductor Inc. www.ait-ic.com AM0460AH MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted; reference only VDS, Drain-Source Voltage 600V VGS, Gate-Source Voltage ±30V ID, Drain Current TC=25°C TC=100°C 4.0A 2.5A IDM, Drain Current Pulsed 16A PD, Power Dissipation TC=25°C 75W Derate above 25°C 0.6W/°C EAS, Single Pulsed Avalanche EnergyNOTE1 60mJ ...