AM0608-200

AM0608-200 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 220 W MIN. WITH 8.7 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM0608-200 BRANDING 0608-200 PIN CONNECTION DESCRIPTION The AM0608-200 is an internally-matched, common base silicon bipolar device optimized pulsed application in the 600 - 750 MHz frequency range. Housed in the industry-standard AMPAC™ metal/ceramic package, this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 75˚C) 875 16.0 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W *Applies only to rated RF amplifier operation August 1992 1/3 AM0608-200 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 10mA IE = 1mA IC = 25mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 50V IC = 1mA 65 3.5 65 — 15 — — — — — — — — 25 120 V V V mA — DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT ηc GP Note: f = 600 — 750MHz f = 600 — 750MHz f = 600 — 750MHz = = 10 µ...