Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Analog Power
N-Channel 60-V (D-S)
MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
AM20N06-90I
VDS (V) 60
PRODUCT SUMMARY rDS(on) (mΩ)
94 @ VGS = 10V 109 @ VGS = 4.5V
ID(A) 19 18
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source
Voltage
VDS 60
Gate-Source
Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TA=25°C TA=25°C
VGS ID IDM IS PD
±20 19 75 42 50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 40 3
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM20N06-90I_1A
Analog Power
AM20N06-90I
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold
Voltage VGS(th)
VDS = VGS, ID = 250 uA
1
V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
±100 nA
Zero Gate
Voltage Drain Current
IDSS
VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55°C
1 uA 25
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 10 V
30
A
Drain-Source On-Resistance
rDS(on)
VGS = 10 V...
