AM20N10-350D

Analog Power N-Channel 100-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AM20N10-350D VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 420 @ VGS = 10V 460 @ VGS = 5.5V ID(A) 9.0 8.6 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25°C TA=25°C VGS ID IDM IS PD ±20 9.0 50 33.6 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM20N10-350D_1A Analog Power AM20N10-350D Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C 1 uA 25 On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V 10 A Drain-Source On-Resistance rDS(on)...