Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rD...
Analog Power
P-Channel 30-V (D-S)
MOSFET
These miniature surface mount
MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TO-251 Surface Mount Package Saves Board Space
High power and current handling capability Extended VGS range (±25) for battery pack
applications
AM20P03-60I
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-30 59 @ VGS = -10V 95 @ VGS = -4.5V
ID (A) 24
19
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Currenta Pulsed Drain Currentb
VDS VGS TA=25oC ID
IDM
-30 V ±25 24 A ±40
Continuous Source Current (Diode Conduction)a
IS -30 A
Power Dissipationa Operating Junction and Storage Temperature Range
TA=25oC PD
50
TJ, Tstg -55 to 175
W oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
January, 2005 - Rev. A PRELIMINARY
1 Publication Order Number: DS...