AM20P06-135D

Analog Power P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AM20P06-135D PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) -60 135 @VGS= -10V 190 @VGS= -4.5V ID (A) 16 14 ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC ID IDM -60 ±20 V 16 A ±40 Continuous Source Current (Diode Conduction)a IS -15 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC PD 50 TJ, Tstg -55 to 175 W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM20P06-135_A Analog Power AM20P06-135D SPECIFICATIONS (TA =25oCUNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Stat...