Analog Power
P-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Analog Power
P-Channel 20-V (D-S)
MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
AM2305PE
VDS (V) -20
PRODUCT SUMMARY rDS(on) (mΩ)
43 @ VGS = -4.5V 54 @ VGS = -2.5V 120 @ VGS = -1.8V
ID(A) -4.5 -4.1 -2.7
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source
Voltage
VDS -20
Gate-Source
Voltage
VGS ±8
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
-4.5 -3.6 -20 -1.8
Power Dissipation a
TA=25°C TA=70°C
PD
1.3 0.8
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
100 166
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM2305PE_1A
Analog Power
AM2305PE
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold
Voltage VGS(th)
VDS = VGS, ID = -250 uA
-0.4
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±8 V
±10
Zero Gate
Voltage Drain Current
IDSS
VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 55°C
-1 -25
On-State Drain Current a
ID(on)
VDS = -5 V, VGS = -4....