AiT Semiconductor Inc.
www.ait-ic.com
AM2306
-30V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The AM2306 is the N-Ch...
AiT Semiconductor Inc.
www.ait-ic.com
AM2306
-30V N-CHANNEL ENHANCEMENT MODE
MOSFET
DESCRIPTION
The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application, and low in-line power loss are needed in a very small outline surface mount package.
AM2306 is available in a SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM2306E3R E3
AM2306E3VR
Note
R: Tape & Reel V: Green Package
AiT provides all Pb free products Suffix “ V “ means Green Package
FEATURES
-30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V Super high density cell design for extremely
low RDS(ON) Exceptional on-resistance and Maximum DC
current capability Available in a SOT-23 package.
APPLICATION
Power Management in Note book Portable Equipment DSC LCD Display inverter Battery Powered System DC/DC Converter
P CHANNEL
MOSFET
REV1.0
- MAR 2011 RELEASED –
N-Channel
-1-
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM2306
-30V N-CHANNEL ENHANCEMENT MODE
MOSFET
Pin # 1 2 3
Symbol G S D
Top View
Function Gate
Source Drain
REV1.0
- MAR 2011 RELEASED –
-2-
AiT Semiconductor Inc.
www.ait-ic.com
AM2306
-30V N-CHANNEL ENHANCEMENT MODE
MOSFET
ABSOLUTE MAXIMUM RATINGS
...