AM2308NE

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AM2308NE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 60 @ VGS = 4.5V 30 82 @ VGS = 2.5V ID (A) 3.5 3.0 G D S ESD Protected 2000V ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Param eter Sym bol Lim it Units VDS Drain-Source Voltage 30 V ±12 G ate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM 3.5 2.8 16 1.25 1.25 0.8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RθJA Maximum 100 166 Units o o t <= 10 sec Steady-State C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2308NE_B Datasheet pdf - http://www.Dat...