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AM2314NE Datasheet

Part Number AM2314NE
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM2314NE DatasheetAM2314NE Datasheet (PDF)

Analog Power N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2314NE VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 32 @ VGS = 4.5V 44 @ VGS = 2.5V ID(A) 5.3 4.5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuou.

  AM2314NE   AM2314NE






Part Number AM2314N
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM2314NE DatasheetAM2314N Datasheet (PDF)

Analog Power AM2314N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Low Gate .

  AM2314NE   AM2314NE







N-Channel MOSFET

Analog Power N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2314NE VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 32 @ VGS = 4.5V 44 @ VGS = 2.5V ID(A) 5.3 4.5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 5.3 4.1 20 1.8 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM2314NE_1A Analog Power AM2314NE Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 0.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±12 V ±10 uA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55°C 1 uA 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 4.5 V 10 A Drain-Source On-Re.


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