AM2326N

Analog Power N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space AM2326N PRODUCT SUMMARY 1.8-V Rated VDS (V) rDS(on) (Ω) 0.070 @ VGS = 4.5V 20 0.080@ VGS = 2.5V 0.120@ VGS = 1.8V ID (A) 2.2 2.0 1.8 G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 20 V ±8 2.2 1.8 A 8 Continuous Source Current (Diode Conduction)a IS 0.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.25 0.8 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature July, 2002 - Rev. A PRELIMINARY 1 Symbol RT HJA Maximum 100 166 Units oC/W Publication Order Number: DS-AM2326_C Analog Power AM2326N SPECIFICATIONS (TA = 25oC UNLESS OTHERWIS...