AM2327P

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space Fast switching speed High performance trench technology AM2327P PRODUCT SUMMARY VDS (V) -20 rDS(on) (OHM) 0.052 @ VGS = -4.5V 0.072 @ VGS = -2.5V 0.120 @ VGS = -1.8V ID (A) -3.6 -3.1 -2.7 G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Ratings Units Drain-Source Voltage Gate-Source Voltage VDS -20 V VGS ±8 Continuous Drain Currenta TA=25oC TA=70oC ID -3.6 -1.8 A Pulsed Drain Currentb IDM -10 Continuous Source Current (Diode Conduction)a IS ±0.46 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.25 0.8 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RTHJA Maximum 100 150 Units oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature July, 2002 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM2327_H An...