AM2330NE

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AM2330NE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 32 @VGS= 10V 44 @VGS= 4.5V ID (A) 5.2 4.5 G D S ESD Protected 2000V ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 30 ±20 V 5.2 4.1 A 30 Continuous Source Current (Diode Conductio...