Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Analog Power
N-Channel 30-V (D-S)
MOSFET
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe SOT-23 saves board space
Fast switching speed High performance trench technology
AM2334N
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 60 @ VGS = 4.5V 82 @ VGS = 2.5V
ID (A) 3.5
3.0
G D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
30 ±12
V
3.5 2.8 A
16
Continuous Source Current (Diode Conduction)a
IS 1.25 A
Po...